ICICDT2019 Program
Monday, 17/06/2019
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Tutorial Session Room 3 (文津厅) Chairman: Olivier Weber, STMicroelectronics, France |
13:00 - 14:20 |
Tutorial 1 - Resistive memories for neuromorphic
hardware, Dr. Elisa Vianello, CEA-LETI |
14:20 - 14:30 |
Break |
14:30 - 15:50 |
Tutorial 2
- Theory
and Application of Visual Structure Learning, Prof. Xi Li, Zhejiang
University |
15:50 - 16:00 |
Break |
16:00 - 17:20 |
Tutorial 3 - Spin torque devices
(3D spintronics): from data storage to artificial intelligence, Prof. Jeongmin Hong, Huazhong University of Science and
Technology |
Tuesday, 18/06/2019
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Opening and Keynote Session Room 1 (观园厅) |
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08:30 - 08:50 |
Welcome Conference
Opening Chairman: Yilong
Hao, Peking University, China |
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08:50 - 09:30 |
Keynote
speech 1
- How to Successfully Overcome Inflection Points by using the Technology
Roadmap Methodology, Dr. Paolo A. Gargini (Intel,
USA) Chairman International Roadmap for Devices and Systems Chairman: BY Nguyen, Soitec,
United States |
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09:30 - 10:10 |
Keynote
speech 2
- Innovation of Integrated Circuit Manufacturing Industry Chain in
More-than-Moore Era, Dr. Hanming Wu (EtownIP Corporation, China) Chairman: BY Nguyen, Soitec,
United States |
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10:10 - 10:30 |
Coffee Break |
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10:30 - 11:10 |
Keynote speech 3 - The several trend discussions on RF
integrated citcuit in 5G base station, Dr. Liming
Ge (Huawei, China) Chairman: Cezhou
Zhao, Xi’an Jiaotong-liverpool University, China |
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11:10 - 11:50 |
Keynote speech 4 - Optimizing the
Leading Edge of Semiconductor Manufacturing, Dr. Jamie Schaeffer (Global
Foundries, USA) Chairman: Cezhou
Zhao, Xi’an Jiaotong-liverpool University, China |
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12:00 - 13:00 |
Lunch (168 cafe) |
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Room 1 (观园厅) Session 1 MEMS and sensors Chairman: Yufeng Jin,
Peking University, China |
Room 2 (姑苏厅) Session 2 GaN technology-I Chairman: Xiao Gong, National University of Singapore, Singapore |
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13:00 - 14:00 |
Invited
talk
- Emerging MEMS Industry in China, from a domestic start-up’s perspective, Hongyuan
Yang, MEMSensing |
Invited
talk -
Development of GaN Monolithic Integrated Circuits
for Power Electronics Applications, Yung C. Liang, National Univ. of
Singapore |
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Invited
talk
- Advanced MEMS device and
packaging technologies, Qinglin Song, Goertek |
Invited
talk -
GaN technology for 5G application, Yi Pei, Dynax |
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Oral
presentation - High sensitive
surface-acoustic-wave optical sensor based on two-dimensional perovskite, Tianyu
Jiang et al, Tsinghua Univ. |
Oral
presentation - Modelling on GaN Power HEMT
with Consideration of Subthreshold Swing Using Artificial Intelligence
Technology,
Yuanzhe Yao et al, Univ. of Electronic Science and
Technology of China |
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Oral
presentation - Miniaturized and High Precision Monitoring System for
Natural Waters Using a Microflow Analyzer, Lin-Lin Ren et al, Tsinghua Univ. |
Oral
presentation - Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input
Direct-Coupled FET Logic (DCFL) Inverters, Miao Cui et al, Xi'an Jiaotong-Liverpool Univ. |
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Oral
presentation - A Gas Medium Approach To
Sensitivity Improvement Of MEMS-Based Thermal Acoustic Particle Velocity
Sensors,
Wenhan Chang et al, Peking Univ. |
Oral
presentation - Effect of High-k Passivation Layer on Electrical
Properties of GaN Metal-Insulator-Semiconductor
Devices,
Yutao Cai et al, Xi'an Jiaotong-Liverpool
Univ. |
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14:00 - 14:30 |
Q/A |
Q/A |
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Room 1 (观园厅) Session 3 SOI and photodetector Chairman: Elisa Vianello, CEA-LETI,
France |
Room 2 (姑苏厅) Session 4 3D package Chairman: Xi Zhang, WinTech
Nano-Technology Services Pte Ltd, China |
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14:30 - 15:45 |
Invited
talk
- Novel photodetectors and
image sensors based on silicon-on-insulator substrate, Jing Wan, Fudan Univ. |
Invited
talk - TSV 3D integration
technology and its applications, Yufeng Jin, Peking Univ. |
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Invited
talk
- Exquisite Ge/Si/O
interactions enabled self-organized heterostructures of Ge nanodot/SiO2/SiGe-recess channel for advanced CMOS phototransistors, Li Pei-Wen, National Chiao Tung Univ. |
Invited
talk
- Progress in Reliability
of Three-Dimensional Integration, Wenhui Zhu, Central
South Univ. |
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Invited
talk - Electro-Thermal analysis
of IGBT module from 3D CAD model, Chen Shen, Cogenda |
Invited
talk
- Developing 3D
Heterogeneous Structures for Future Chips, Albert Wang, Univ. of California |
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Oral
presentation - 1T1C Ultra low power relative Thermal-Voltage sensor in
28nm UTBB FD-SOI, Ph. Galy et al, STmicroelectronics |
Invited talk - Low
Temperature SmartCutTM enables High Density 3D SoC Applications, W. Schwarzenbach, B.-Y. Nguyen, G. Besnard, SOITEC |
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Oral
presentation - Threshold voltage tuning of 22 nm FD-SOI devices fabricated with
metal gate last process, Cuiqin Xu et al, Shanghai Huali Integrated Circuit Corporation |
Oral
presentation - Susceptibility Evaluation of 3D Integrated Static Random
Access Memory with Through-Silicon Vias (TSVs) , XueBing Cao
et al, Harbin Institute of Technology |
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Oral
presentation - Compact MOS Structure & Design for Ion−Ioff Thermal control in 28nm UTBB FD-SOI CMOS technology, R. Lethiecq
et al, ST Microelectronics |
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15:45 - 16:15 |
Q/A (with Coffee Break) |
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Room 1 (观园厅) Session 5 Digital IC Chairman: Yi Pei, Dynax
Semiconductor Inc., China |
Room 2 (姑苏厅) Session 6 TFTs Chairman: Chun Zhao, Xi’an Jiaotong-liverpool University, China |
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16:15 - 17:30 |
Invited
talk - Voltage step stress: a
technique for reducing test time for device ageing, Jianfu
Zhang, Liverpool John Moores Univ. |
Invited
talk
- A Novel
Three-Dimensional Submicron ZnO Inverter Technology
with Refined Contact Design, Horng-Chih Lin, National Chiao Tung Univ. |
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Oral
presentation - On-Chip Process Variation Sensor Based on Sub-Threshold Leakage
Current with Weak Bias Voltages, Shengkai Lyu et al, Zhejiang Univ. |
Invited
talk
- Effects of moisture
absorption on the reliability behaviors of InGaZnO
thin film transistors, Xiaodong Huang, Southeast Univ. |
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Oral
presentation - 10Gbps Length adaptive on-chip RF serial link for Network
on Chips and Multi-processor chips applications, TMIMI Mohammed et al, Univ
Grenoble Alpes , RFIC Lab |
Invited
talk - Advanced diffusion
barriers for Cu and Co interconnect, Xinping
Qu, Fudan Univ. |
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Oral
presentation - A 500-Mbps Digital Isolator Circuits using Counter-Pulse
Immune Receiver Scheme for Power Electronics, Tsukasa Kagaya
et al, The Univesity of Tokyo |
Oral
presentation - Degradation in P-type Poly-Si Thin-Film Transistors under
Pulse Bias Stresses, Yining Yu et al, Soochow Univ. |
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Oral
presentation - Standard Cell Optimization for Ultra-Low-Voltage Digital
Circuits,
Yuting Chen et al, Peking Univ. Shenzhen
Graduate School |
Oral
presentation - Solution Processed LiSnO
Thin-film Transistors with Peroxide- Aluminum Oxide Dielectric, T S Zhao et al, Xi'an Jiaotong-Liverpool Univ. |
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Oral
presentation - Low Power Karnaugh Map Approximate Adder for Error
Compensation in Loop Accumulations, Chunmei
Yang et al, Peking Univ. Shenzhen Graduate School |
Oral
presentation - Plasma-Enhanced Combustion-Processed Al2O3 Gate Oxide for
In2O3 Thin Film Transistors, Q H Liu et al, Xi'an Jiaotong-Liverpool
Univ. |
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17:30 - 18:00 |
Q/A |
Q/A |
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18:00 |
Banquet |
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Wednesday, 19/06/2019
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Room 1 (观园厅) Session
7 AI and Algorithm Chairman: Chenjian
Wu, Soochow University, China |
Room 2 (姑苏厅) Session 8 RRAM and Synapse Chairman: Horng-Chih Lin, National Chiao Tung University, Taiwan, China |
08:30 - 09:35 |
Invited talk - Research and Application of 3D
Sensing Intelligent Chip Technology, Xuguang
Wang, SINANO,CAS |
Invited talk - Impact of Al+ implantation on the
Switching Characteristics of Al2O3/La2O3/Al2O3 multilayer RRAM devices, Hongxia
Liu, Xidian Univ. |
Invited talk - Challenges and Opportunities,
Semiconductor industry at the age AI and IoT, Di Wu, FJ Dynamics |
Invited talk - Photonic synapse for neuromorphic
computing,
Suting Han, Shenzhen Univ. |
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Invited talk - Chiplet and Tier 1 IC Supplier
to enable AIoT Era, Jingyang
Zhang, MooreElite |
Invited talk - Interface and Doping Engineering of
HfO2 Based Multi-Level RRAM: Towards Synaptic Simulation for Neuromorphic
Computation,
Gang Niu, Xi'an Jiaotong
Univ. |
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Oral presentation - A fast load-shedding
algorithm for power system based on artificial neural network, Youming
Wang et al, Shandong Univ. |
Oral presentation - Characteristics of Ni/AlOx/Pt RRAM devices with various dielectric fabrication
temperatures,
Z J Shen et al, Xi'an Jiaotong-Liverpool Univ. |
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Oral presentation - CNN-based Approach for Estimating
Degradation of Power Devices by Gate Waveform Monitoring, Koutaro
Miyazaki et al, The Univ. of Tokyo |
Oral presentation - Design of Artificial
Spiking Neuron with SiO2 Memristive Synapse to
Demonstrate Neuron-Level Spike Timing Dependent Plasticity, Jessie Xuhua Niu et al, National Univ.
of Singapore |
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09:35 - 10:20 |
Q/A
(with Coffee Break) |
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Room 1 (观园厅) Session
9 RF IC Chairman: Zhenghao Lu, Soochow University,
China |
Room 2 (姑苏厅) Session 10 Memory Chairman: Jing Wan, Fudan
University, China |
10:20 - 11:30 |
Invited talk - Digital RFIC Design in Advanced
CMOS, Hongtao Xu, Fudan Univ. |
Invited talk - Radiation effects of floating-gate
(FG) and charge-trapping (CT) Flash memory technologies, Jinshun
Bi, Institute of Microelectronics, CAS |
Invited talk - Active Rectifiers in Wireless Power
Transmission Systems, Li Geng, Xi'an Jiaotong Univ. |
Oral presentation - A 12T Low-Power Standard-Cell
Based SRAM Circuit for Ultra-Low-Voltage Operations, Jiacong
Sun et al, Peking Univ. Shenzhen Graduate School |
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Oral presentation - A PVT Validation Phase-Lock Loop
with Multi-Band VCO Applied in Closed-Loop FOGs, Tsung-Yi Tsai et al, National Sun
Yat-Sen Univ. |
Oral presentation - Ultra Low Power
Single-ended 6T SRAM Using 40 nm CMOS Technology, Chua-Chin Wang et al, National
Sun Yat-Sen Univ. |
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Oral presentation - Design of 140GHz
Narrow Band-pass Planar Filters Based on Open Loop Resonators, Shengqi
Shi et al, Tsinghua Univ. |
Oral presentation - Performance Evaluation of Static
Random Access Memory (SRAM) based on Negative Capacitance FinFET, Chen Sun et al, National Univ. of Singapore |
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Oral presentation - Low Frequency Noise in CMOS Switched-gm
mixers: A Quasi Analytical Model, Benqing Guo et al, uestc |
Oral presentation - Cost-Effective Reliable EEPROM
Cell Based on Single-poly Structure, Peiying
Song et al, Soochow Univ. |
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Oral presentation - A CMOS Low-noise
Active Mixer with Capacitive Neutralization Technique, Benqing
Guo et al, uestc |
Oral presentation - Memory System Designed for
Multiply-Accumulate (MAC) Engine Based on Stochastic Computing, Xinyue
Zhang et al, Institute of Microelectronics and Key Laboratory of Microelectronics
Devices and Circuits (MoE) |
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11:30 - 12:00 |
Q/A |
Q/A |
12:00 - 13:00 |
Lunch
(168 cafe) |
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Poster Session (Corridor) |
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13:00 -14:00 |
P1 – Design Considerations of Data Converters for
Industrial Technology, Hua Fan et al, University of Electronic Science
and Technology of China.
P2 – A High Speed Low Power
Pipelined SAR Analog to Digital Converter, Ko-Chi Kuo,National Sun Yet-sen
University Kaohsiung. P3 – Simulation Analysis of the
Noise of a Unity Gain Sampler, Xiao Wang et al, Shenyang
Institute of Automation. P4 – High Phase Accuracy QVCO
with Current Reuse and Bulk-Coupled Structure, Yan Zhou et al, Soochow
University. P5 – Effects of Substrate Terminal on the Dynamic
Resistance and the Midpoint Potential of High Voltage Cascode
GaN HEMTs, JunFeng
Wu et al, Gpower Semiconductor Inc. P6 – A 28GHz Injection-Locked
Voltage-Controlled Oscillator Pair with Tunable Phase Outputs in 130nm CMOS, Chen-Yi Zhou et al,
Zhejiang University. P7 – Leakage Current Analysis
for Epitaxial Silicon Pulse Radiation Detector, Jiale Liu et al, Peking
University. P8 – Fast Locking Technique by
Using a Programmable Operational Transconductor for
a Phase Lock Loop Design, Ko-Chi Kuo, National Sun Yat-Sen University Kaohsiung. P9 – A Write-Verification
Method for Non-Volatile Memory, Yiping Zhang et al, Soochow
University. P10 – High Integration Negative
Charge Pump with Dual Operation Modes, LI Yajun
et al, Nanjing Guobo Electronics Co. Ltd. P11 – Tile Buffer Design for
Linear-U Data Layout in Embedded GPU, Li Jiayun
et al, Xi'an University of Posts and Telecommunications. P12 – Experimental Comparison
of AlGaN/GaN-on-Si
Schottky Barrier Diode With and Without Recessed
Anode, Qinglei Bu et al, Xi’an Jiaotong-Liverpool University. P13 – Design of GaN-based Voltage Reference Circuit for a
Wide-Temperature-Range Operation, Xudong Chen et al, Xi’an Jiaotong-Liverpool University. P14 – Design and Evaluation of GaN-based OverTemperature
Protection Circuit, Lei Kang et al, Xi’an Jiaotong-Liverpool University. P15 – Design and Evaluation of AlGaN/GaN High Electron
Mobility Transistor Comparator, Bangbo Sun et al, Xi’an
Jiaotong-Liverpool University. P16 – A full GaN-Integrated
Sawtooth Generator based on Enhancement-mode AlGaN/GaN MIS-HEMT for GaN Power Converters, Xueteng Li et al, Xi’an Jiaotong-Liverpool University. P17 – Self-healing Control and
Auto-measurement Technique for Smart Distribution Grid, Zai-xin Yang et al, Inner Mongolia Electric Power Research
Institute, Hohhot. P18 – 50% Breakdown Voltage
Enhancement of p-MTJ Utilizing Sub-20ns Writing Pulse, Teng
Wang, Nanjing University of Posts and Telecommunications. P19 – DNFIT Based Curve Fitting And Prediction In Semiconductor Modeling And Simulation, WenFei Hu et al, Tsinghua University. P20 – The Impact of AlGaN Barrier on Transient VTH Shifts and VTH Hysteresis
in Depletion and Enhancement mode AlGaN/GaN MIS-HEMTs, Bohan Lu et al, Xi’an Jiaotong-Liverpool University. P21 – Simulation of Proton
Induced Single Event Upsets in Bulk Nano-CMOS SRAMs, Xuebing Cao et al, Harbin Institute of Technology. P22 – A Margin Adjustable
Amplifier Circuit for RRAM Read Access, Jinchen Liu et al, Soochow
University, China P23 – A method for real-time
measurement of seismic isolation rubber bearing based on Embedded MEMS
pressure sensors, Shoule
Sun et al, Peking University. P24 – 0.5~43GHz 1:2 Static
Frequency Divider MMIC in InP HBT, Min
Zhang et al, Nanjing Guobo Electronics Co.,
Ltd. P25 – Design of a Low-Voltage
CMOS Mixer with Improved Linearity, J. Gou et al, Research
Institute of China Electronic Technology Group Corporation. P26 – Short-wavelength Spin Wave
excitation utilizing external magnetic field, B. Wei et al, Air
Force Engineering University. P27 – Modeling Simulation and
Circuit Implementation of Millimeter Wave Phase-Locked Loop Based on Simulink, He
Xiao et al, Shenzhen University. P28 – A Sparse Event-Driven
Unsupervised Learning Network with Adaptive Exponential Integrate-and-Fire
Model, Zhao Zhao et al, Peking
University. P29 – An Application-Specific
Microprocessor for Energy Metering Based on RISC-V, Yajie Wang et al, Zhejiang University. P30 – Small Area High Speed
Configurable FFT Processor, Xiaoyu Zhang et al, Nanjing
University of Aeronautics and Astronautics. P31 – A dual-threshold
credit-based flow control mechanism for 3D Network-on-Chip, Li
Xiangli et al, Nanjing University of
Aeronautics and Astronautics. P32 – Soft-Error-Tolerant
Ultralow-Leakage 12T SRAM Bitcell Design, Jianwei Jiang et al, Shanghai Institute of
Microsystem and Information Technology, CAS. P33 – High-Voltage Driver for Fully-Integrated Piezoelectric Inkjet Printhead Module, Zhuoqi Guo et al, Xi’an Jiaotong University |
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Room 1 (观园厅) Session
11 Analogy IC Chairman:HongtaoXu, Fudan University, China |
Room 2 (姑苏厅) Session 12 GaN Technology-II Chairman: Jianfu Zhang, Liverpool John Moores University, the United Kingdom |
14:00 - 15:00 |
Invited talk - New Generation High Performance
Audio Power Amplifier Design Technology, Xiaodong
Cao, IOS,CAS |
Invited talk - MOCVD growth and physical
properties of GaN-based epilayers and
heterostructures on Si substrates, Bo Shen, Peking Univ. |
Oral presentation - A Compact Low Voltage CMOS
Current Mirror with High Output Resistance, Bai Chunfeng
et al, Soochow Univ. |
Invited talk - Defect-free epitaxial quantum
structure arrays, Changsi Peng, Soochow Univ. |
|
Oral presentation - A Low Frequency OTA
Design with Temperature-Insensitive Variable Transconductance Using 180-nm
CMOS Technology, Nanang Sulistiyanto
et al, National Sun Yat-Sen Univ. |
Oral presentation - High-Performance
Quasi-Vertical GaN Schottky Barrier Diode on
Silicon Substrate with a Low Dislocation Density Drift Layer, Yue Li et al, Peking
Univ. |
|
Oral presentation - A Wide Temperature Range 4.6
ppm/°C Piecewise Curvature-Compensated Bandgap Reference With
No Amplifiers,
Jinghui An et al, Soochow Univ. |
Oral presentation - Toward Reliable
Extraction of the Properties of Border Traps in Lateral GaN
Power MOSFET with a Distributed Network Model, Ruiyuan
Yin et al, Peking Univ. |
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Oral presentation - A Current-Mode CMOS Hall Sensor
Microsystem based on Four-Phase Current Spinning Technique, Xingxing
Hu et al, Nanjing Univ. of Posts and Telecommunications |
Oral presentation - Enhanced Biased Radiation and
Illumination Stress Stability of Solution-processed AlOx
Dielectrics using Hydrogen Peroxide, Y X Fang et al, Xi’an Jiaotong-Liverpool Univ. |
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15:00 - 15:45 |
Q/A
(with Coffee Break) |
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Room 1 (观园厅) Session
13 Invited talk session: Micro
Systems for Health Care Chairman: Dina Triyoso,
Tokyo Electron Limited (TEL), USA |
Room 2 (姑苏厅) Session 14 Invited talk session: Packaging Chairman: Mingxiang Wang, Soochow University, China |
15:45 - 16:30 |
Invited talk - “Minimally Invasive Surgery” in
(111) Wafer for MEMS Sensors, Xinxin Li, SIMIT,CAS |
Invited talk - Using pressure-free nano silver sintering for die attach in power
electronics,
Ellie Fu, Nano and Advanced Materials Institute Limited |
Invited talk - Flexible Microsystem for Smart
Healthcare,
Zhihong Li, Peking Univ. |
Invited talk - Comprehensive study of wire bond
reliability impacts from wire, molding compound and bond pad contaminations, Xi Zhang, WinTech Nano-Technology Services Pte Ltd |
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Invited talk - Graphene based Wearable Sensors for
Healthcare,
Tianling Ren, Tsinghua Univ. |
Invited talk - Investigation and industrialization
on emerging piezoelectric MEMS, Wei Pang, ROFS MICROSYSTEM/Tianjin Univ. |
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16:30 - 16:50 |
Q/A |
Q/A |
16:50 - 17:10 |
Room 2 (姑苏厅) Closing and Award
Session Chairman: Mingxiang Wang, Soochow
University, China |